12 Month Periodic Activity Report Public Summary
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Instrument: Integrated Project
Thematic Priority: NMP
Period covered: from 01-04-2005 to 31-03-2006
Date of preparation: 12-05-2006
Start date of project: 01-04-2005
Duration: 5 years
Publishable executive summary
During the first period a remarkable progress towards the overall aim of massively parallel addressable cantilever arrays have been achieved. First working arrays of up to 4x32 cantilevers have been realized (Uni Kassel) enabling experiments focussing on the fundamental understanding of parallel operation of cantilevers with integrated actuation and readout and the interaction of the probes with the control and data acquisition on the on the one hand and the scanning mechanism on the other hand (WP3). The realization of shallow junction piezoresistive deflection sensors has been addressed by the development of sophisticated implantation techniques (FZR) which has already been used for the fabrication of the first generation of probes. High dose ion implantation has been used for the creation of heater elements (FZR) of the thermal bimorph actuator.
Fig. 0.1: First generation of cantilever array probes with 4x32 fully addressable cantilevers
For the realization of the first generation of probes dedicated mask layouts have been designed (Uni Kassel, UISAV) and the processing sequences have been developed. Especially tailored analysis methods are accompanying the process development for understanding the detailed composition of deposited layers and gaining insight into the implanted doping profiles (INPL). The integration of ultrasharp tips into the process flow of the addressable cantilever arrays is particularly investigated and special process sequences ensuring the protection of the fragile tip during subsequent processing are developed (Nanoworld).
A dedicated packaging for the first generation of probe array has been evaluated and realized (ARCS). Parallel to that, the concept and technology development for customized packaging of the massively parallel second generation of probe arrays with vertical interconnections have been started. A preliminary technology for the realisation of vertical interconnections through the wafer has been established as basis for the fabrication of the second generation of probe arrays with higher integration density (UU).
As an alternative to the silicon technology with the potential of cheaper mass manufacturing and high actuation efficiency polymer based cantilever arrays are developed and first demonstrators have been realized during the reporting period (RAL).
The nano-measurement machine has been improved and adapted to the requirements of a scanning stage for the addressable cantilever arrays (SIOS). Especially tailored probe mounting adaptors have been developed and integrated.